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BPW24R
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
FEATURES
* Package type: leaded * Package form: TO-18 * Dimensions (in mm): O 4.7 * Radiant sensitive area (in mm2): 0.78 * High photo sensitivity * High radiant sensitivity
948642
* Suitable for visible and near infrared radiation * Fast response times * Angle of half sensitivity: = 12 * Hermetically sealed package * Cathode connected to package * Central chip alignment * Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with
DESCRIPTION
BPW24R is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The device features a low capacitance and high speed even at low supply voltages.
APPLICATIONS
* High speed photo detector
PRODUCT SUMMARY
COMPONENT BPW24R Note Test condition see table "Basic Characteristics" Ira (A) 60 (deg) 12 0.5 (nm) 600 to 1050
ORDERING INFORMATION
ORDERING CODE BPW24R Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 1000 pcs, 1000 pcs/bulk PACKAGE FORM TO-18
ABSOLUTE MAXIMUM RATINGS
PARAMETER Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified t5s Connected with Cu wire, 0.14 mm2 Tamb 25 C TEST CONDITION SYMBOL VR PV Tj Tamb Tstg Tsd RthJA VALUE 60 210 125 - 40 to + 125 - 40 to + 125 260 350 UNIT V mW C C C C K/W
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For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81520 Rev. 1.5, 11-Aug-08
BPW24R
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
BASIC CHARACTERISTICS
PARAMETER Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Temperature coefficient of Vo Short circuit current Temperature coefficient of Ik Reverse light current Absolute Spectral Sensitivity Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Rise time Fall time Note Tamb = 25 C, unless otherwise specified VR = 20 V, RL = 50 , = 820 nm VR = 20 V, RL = 50 , = 820 nm TEST CONDITION IR = 100 A, E = 0 VR = 50 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 5 V, f = 1 MHz, E = 0 VR = 20 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm EA = 1 klx Ee = 1 mW/cm2, = 950 nm, VR = 20 V VR = 5 V, = 870 nm VR = 5 V, = 900 nm SYMBOL V(BR) Iro CD CD CD Vo TKVo Ik TKIk Ira s() s() p 0.5 tr tf 45 MIN. 60 TYP. 200 2 11 3.8 2.5 450 -2 55 0.1 60 0.60 0.55 12 900 600 to 1050 7 7 10 MAX. UNIT V nA pF pF pF mV mV/K A %/K A A/W A/W deg nm nm ns ns
BASIC CHARACTERISTICS
Tamb = 25 C, unless otherwise specified
10 3
V R = 50 V
I ra rel - Relative Reverse Light Current
10 4 Iro - Reverse Dark Current (nA)
1.4
1.2
VR = 5 V = 950 nm
10 2
1.0
10 1
0.8
10 0 20
94 8454
0.6 0 20 40 60 80 100 Tamb - Ambient Temperature (C)
40
60
80
100
120
94 8409
Tamb - Ambient Temperature (C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 81520 Rev. 1.5, 11-Aug-08
For technical questions, contact: detectortechsupport@vishay.com
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BPW24R
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
1000
S ()rel - Relative Spectral Sensitivity
10
Ira - Reverse Light Current (A)
1.0 0.8 0.6 0.4 0.2 0 350
100
10 V R = 10 V = 950 nm
1
0.1 0.01
94 8455
0.1
1
550
750
950
1150
Ee - Irradiance (mW/cm2)
94 8458
- Wavelength (nm)
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
100 Ira - Reverse Light Current (A)
0
10
20 30
1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 = 950 nm
Srel - Relative Sensitivity
40 1.0 0.9 0.8 0.7 50 60 70 80
10
0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2
1 0.1
94 8456
1
10
100
94 8459
0.6
0.4
0.2
0
VR - Reverse Voltage (V)
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
12 CD - Diode Capacitance (pF) 10 8 6 4 2 0 0.1
94 8439
E=0 f = 1 MHz
1
10
100
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
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For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81520 Rev. 1.5, 11-Aug-08
- Angular Displacement
BPW24R
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
A
C
Chip position
(2.5)
6.15
0.25
O 4.69
+ 0.02 - 0.07
O 0.45
+0.02 -0.05
13.2
0.7
5.5
2.54 nom.
0.15
technical drawings according to DIN specifications
Lens
Drawing-No.: 6.503-5022.02-4 Issue: 1; 24.08.98
14487
4
0.05
Document Number: 81520 Rev. 1.5, 11-Aug-08
For technical questions, contact: detectortechsupport@vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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